Non-volatile memory based on solution-cast thin films of ferroelectric polymers has emerged as a promising low-cost information storage technology for large-areamicroelectronic applications

Non-volatile memory based on solution-cast thin films of ferroelectric
polymers has emerged as a promising low-cost information
storage technology for large-areamicroelectronic applications.1,2
The random copolymer poly(vinylidene-fluoride-co-triflouroethylene)
(P(VDF-TrFE)) is the most attractive material due to its high
remanent polarization3–5 and therefore frequently used in memory
elements, such as capacitors,6,7 ferroelectric field-effect transistors8,9
and diodes.10–13 To write/erase data, ferroelectric polarization is
switched by an external electric field that is larger than the coercive
field, Ec, which for P(VDF-TrFE) amounts to B50 MV m1.4,5
In principle, this high coercive field of P(VDF-TrFE) requires
high voltages for polarization switching. To nevertheless
keep the operation voltage below 10 V, polymer films with a
thickness below 200 nm are required. However, since thin
layer-devices are more susceptible to film imperfections, such
as a rough microstructure, production yields are prohibitively
suppressed.